发明名称 SMELTING METHOD
摘要 PURPOSE:To stably smelt an alloy which involves an exothermic reaction at the time of synthesis at a high yield without generating splashes by forming a component element which is a part of alloy constituting component elements as a molten bath and lowering the other component element in the form of a bar into the molten metal at a controlled speed. CONSTITUTION:Silicon having high purity (about >=9N) is melted in a vacuum or under the reduced pressure of argon in a crucible in the case of smelting the alloy or intermetallic compd. which involves the exothermic reaction at the time of alloying or synthesizing; for example, in the case of smelting titanium silicide. A titanium bar having high purity is then lowered into the molten bath thereof and is gradually melted. The lowering speed of the titanium bar is generally set at 10-2,000mm/min. The lowering speed is so controlled at this time to decrease the reaction amount in an initial period when the exothermic reaction is vigorous and to increase the reaction amount with gradual settling down of the reaction. The splashing is thereby suppressed and the titanium silicide is synthesized at a high yield.
申请公布号 JPS63179029(A) 申请公布日期 1988.07.23
申请号 JP19870008292 申请日期 1987.01.19
申请人 NIPPON MINING CO LTD 发明人 SAWADA SUSUMU;KUROKI MASAMI;KANANO OSAMU
分类号 C01B33/06;C22C1/02 主分类号 C01B33/06
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