| 摘要 |
<p>A lateral MOS device (1) is formed in a body (2) having a surface (7) and is formed by a semiconductor layer (40) of a first conductivity type; a drain region (10, 11) of a second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a source region (13) of the second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a channel (15) of the first conductivity type, formed in the semiconductor layer (40) between the drain region (10, 11) and the source region (13) and facing the surface (7); and an insulated gate region (20-22), formed on top of the surface (7) over the channel region (15). In order to improve the dynamic performance, a conductive region (23) extends only on one side of the insulated gate region (20-22), on top of the drain region (10, 11) but not on top of the insulated gate region.</p> |
