| 摘要 |
PROBLEM TO BE SOLVED: To realize an economical method and apparatus for introducing impurities with which a quantity of the impurities to be introduced can be precisely controlled and the impurities can be prevented from diffusing deeply. SOLUTION: An amorphous processing chamber consists of a container 1, a specimen table 2 provided in the container 1, a window 3 provided oppositely to the table 2, and five Xe lamps 4 as an ultraviolet light source opposite to the table 2 across the window 3. A silicon substrate 5 as a specimen is mounted on the specimen table 2, and ultraviolet rays emitted from the Xe lamps 4 are radiated to the surface of the silicon substrate 5, thereby destroying a crystalline structure in the vicinity of the surface of the substrate 5 to be amorphized. Thereafter, by subjecting the amorphized substrate surface to ion supply treatment and activation treatment, extremely shallow impurities can be introduced onto the substrate surface. COPYRIGHT: (C)2006,JPO&NCIPI
|
