SAPPHIRE SUBSTRATE AND ITS HEAT TREATMENT METHOD, AND METHOD OF CRYSTAL GROWTH

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to obtain a high quality epitaxial thin film by a sapphire substrate (0001) used conventionally because the surface begins to roughen by a thermal treatment in a hydrogen atmosphere before epitaxial growth of a crystal. SOLUTION: The sapphire substrate has a principal surface which is a surface (11-20), wherein a thermal treatment in a hydrogen atmosphere is given to the above principal surface for which surface planarization is performed by grinding. COPYRIGHT: (C)2006,JPO&NCIPI