发明名称 Semiconductor device
摘要 A first wiring part in a first wiring layer is a starting terminal that is connected to a ground potential. The first wiring part and a second wiring part in a second wiring layer are connected by a first connecting part. The second wiring part and a third wiring part in a third wiring layer are connected by a second connecting part. A fourth wiring part continuously connected with the third wiring part and a fifth wiring part in the second wiring layer are connected by a third connecting part. The fifth wiring part and a sixth wiring part in the first wiring layer are connected by a fourth connecting part. A conducting path that is continuously connected from the starting terminal to an output end is formed by connecting a mound-shaped conducting path thus formed.
申请公布号 US2006049400(A1) 申请公布日期 2006.03.09
申请号 US20050043336 申请日期 2005.01.27
申请人 FUJITSU LIMITED 发明人 YOSHIDA TETSUYA;KOIKE YOSHIHIKO
分类号 H01L23/58 主分类号 H01L23/58
代理机构 代理人
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