发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>In view of the problem that an organic semiconductor layer of an organic TFT is likely to deteriorate due to water, light, oxygen, or the like, it is an object of the present invention to simplify a manufacturing step and to provide a method for manufacturing a semiconductor device having an organic TFT with high reliability. According to the invention, a semiconductor layer containing an organic material is formed by patterning using a mask, and thus an organic TFT is completed in the state where the mask is not removed but to remain over the semiconductor layer. In addition, a semiconductor layer can be protected from deterioration due to water, light, oxygen, or the like by using the remaining mask.</p>
申请公布号 WO2006025473(A1) 申请公布日期 2006.03.09
申请号 WO2005JP15963 申请日期 2005.08.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MAEKAWA, SHINJI 发明人 MAEKAWA, SHINJI
分类号 H01L29/786;H01L51/05 主分类号 H01L29/786
代理机构 代理人
主权项
地址