| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flash memory element capable of improving the reliability of the element by preventing source/drain selection transistors from being exposed when forming source/drain contacts and preventing a short circuit when subsequently forming plugs. SOLUTION: The method of manufacturing a flash memory element comprises steps of: forming multitudes of memory cells 21 and selection transistors 22 in a predetermined region on a semiconductor substrate; sequentially forming a first oxide film 208, a nitride film 209 and a second oxide film 210 on the upper portion of the overall structure; etching the entire surface of the second oxide film 210 and forming spacers 210 on sidewalls of the selection transistors 22; forming an interlayer insulation film 211 on the upper portion of the overall structure and then etching a predetermined region of the interlayer insulation film 211 to form contacts 212 between the selection transistors; and filling the contacts to form plugs. COPYRIGHT: (C)2006,JPO&NCIPI
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