| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride system compound semiconductor transistor containing a buffer layer having high resistance, and its manufacturing method. SOLUTION: A transistor 21 comprises a low-temperature nucleation layer 23, a gallium nitride buffer layer 25, and a group III nitride layer 27. The low-temperature nucleation layer 23 is formed on a substrate 29 at a low temperature, for instance roughly ranged from 400°C to 900°C, consequently contains oxygen taken in during growth. The gallium nitride buffer layer 25 is prepared on the low-temperature nucleation layer 23. The group III nitride layer 27 is prepared between the low-temperature nucleation layer 23 and the gallium nitride buffer layer 25, and consists of a nitride containing aluminum. The low-temperature nucleation layer 23 is greater than the gallium nitride buffer layer 25 in oxygen richness. COPYRIGHT: (C)2006,JPO&NCIPI
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