发明名称 CHEMICAL MACHINE POLISHING COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a polishing composition, especially a polishing composition for CMP wherein high polishing speed is attained in spite of not needing combination of polish abrasive grains, and faults such as dishing can be reduce though bad influence of an anticorrosive is excepted, and to provide a method for polishing copper or a copper alloy wiring board by especially applying the polishing composition for CMP to CMP of copper or the copper alloy wiring board. SOLUTION: In the polishing composition, a water medium, an oxidant, a polish accelerator which has both polish accelerating nature and corrosion proof functionality, and a friction reduction agent if it is requested are contained, a polish abrasive grain is not blended, and furthermore, the anticorrosive is not necessarily blended. A polishing method of a metal (copper) surface which uses the polishing composition is also provided. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006066851(A) 申请公布日期 2006.03.09
申请号 JP20040285428 申请日期 2004.08.30
申请人 MATSUMURA SEKIYU KENKYUSHO:KK 发明人 YANO JUNICHI;HONDA SEIICHI;TANAKA MASATO
分类号 H01L21/304;B24B37/00 主分类号 H01L21/304
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