| 摘要 |
PROBLEM TO BE SOLVED: To improve the controllability of an etching property by minutely and freely controlling a flow and a richness distribution of treatment gas introduced in a treatment vessel. SOLUTION: In this plasma etching equipment, as a gas introduction part for introducing gas for etching into a plasma formation space PS in a chamber 10, a side gas introduction part 104 which introduces gas from the side wall side of the chamber 10 is installed in addition to a configuration which is provided with an upper gas introduction part which introduces gas from an upper electrode 38 side (an upper center shower head 68a and an upper peripheral shower head 68a). The side gas introduction part 104 is provided with a side shower head 108 which is attached on the side wall of the chamber 10. COPYRIGHT: (C)2006,JPO&NCIPI
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