| 摘要 |
Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.
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