| 摘要 |
PURPOSE:To obtain a light emitting diode safely enhanced in brightness by a method wherein a semiconductor multilayer mirror prescribed in composition not to generate arsine in the air is provided. CONSTITUTION:An N-type semiconductor multilayer mirror 9 composed of 25 periods of an Al0.95Ga0.05As 8 and an Al0.4Ga0.6As 7 is formed on an N-type GaAs substrate 5 through the intermediary of an N-type GaAs buffer layer. An N-type (Al0.7Ga0.3)0.51In0.49P clad layer 16, an undoped (Al0.1Ga0.9)0.51In0.49P active layer 15, and a P-type (Al0.7Ga0.3)0.51In0.49P clad layer 14 are successively formed to form a light emitting section of double heterojunction. Therefore, a layer of AlbGa1-bAs (0.95<=b<1) is used as a component layer of a semiconductor multilayer mirror, whereby a light emitting diode of this constitution can be increased twice to three times as much in intensity as a conventional one and enhanced in safety, since no arsine is produced while a device forming process is carried out. |
