发明名称 Integrated circuit with reverse engineering protection
摘要 Technique and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having controlled outlines and controlled thicknesses. A layer of dielectric material of a controlled thickness is disposed among said plurality of layers to thereby render the integrated circuit structure intentionally inoperable.
申请公布号 US7008873(B2) 申请公布日期 2006.03.07
申请号 US20050089415 申请日期 2005.03.23
申请人 RAYTHEON COMPANY 发明人 CHOW LAP-WAI;CLARK, JR. WILLIAM M.;BAUKUS JAMES P.
分类号 H01L21/44;H01L21/00;H01L21/338;H01L21/4763;H01L21/84;H01L23/58;H01L27/02 主分类号 H01L21/44
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