发明名称 |
Method and system for fabricating free-standing nanostructures |
摘要 |
Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.
|
申请公布号 |
US7008853(B1) |
申请公布日期 |
2006.03.07 |
申请号 |
US20050066320 |
申请日期 |
2005.02.25 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
DUPONT AUDREY;HOYER RONALD |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|