SEMICONDUCTOR DEVICE COMPRISING DUAL SILICON NITRIDE LAYERS,申请号KR20050027960-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE COMPRISING DUAL SILICON NITRIDE LAYERS
摘要
申请公布号	KR100555811(B1)	申请公布日期	2006.03.03
申请号	KR20050027960	申请日期	2005.04.04
申请人		发明人
分类号	H01L21/283;H01L21/28;H01L21/285;H01L21/314;H01L21/318;H01L21/336;H01L21/60;H01L21/768;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/41;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L29/788;H01L29/792	主分类号	H01L21/283
代理机构		代理人
主权项
地址

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