| 发明名称 |
GaN-BASED FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREFOR |
| 摘要 |
<p>A GaN-based hetero-junction transistor capable of accomplishing higher output, higher withstand voltage, higher speed, higher frequency and the like. A hetero-junction-structure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulation film (10).</p> |
| 申请公布号 |
WO2006022453(A1) |
申请公布日期 |
2006.03.02 |
| 申请号 |
WO2005JP16065 |
申请日期 |
2005.08.26 |
| 申请人 |
NS TECHNOLOGY, INCORPORATED ADMINISTRATIVE AGENCYNATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIO;HIGASHIWAKI, MASATAKA |
发明人 |
HIGASHIWAKI, MASATAKA |
| 分类号 |
H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/338 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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