| 摘要 |
To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.
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