| 摘要 |
Methods of forming at least one multiconductor via are disclosed. Specifically, a substrate may be provided and at least one through-hole may be formed therethrough. At least one seed layer may be formed, patterned, and a metal may be deposited thereon to form a plurality of conductive elements. Alternatively, the at least one through-hole may be substantially filled with a dielectric material and a plurality of smaller through-holes may be formed therein and then filled with conductive material to form a plurality of conductive elements. Alternatively, at least one cavity may be formed into a substrate and a plurality of conductive nanotubes or other protruding structures may be formed therein. The substrate may be thinned to form at least one through-hole and a plurality of laterally separated conductive elements extending therethrough. Semiconductor dice, substrates, as well as multichip modules having dice including multiconductor vias, systems including same, and methods of manufacture are also disclosed. |
