| 摘要 |
A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support body, and a semiconductor chip provided on the first substrate exposed to an opening part piercing the support body and the second substrate. The first substrate includes a first dielectric layer and a wiring layer, a plurality of first electrodes connected to the semiconductor chip which first electrodes are provided on a first surface of the first substrate exposed to an inside of the opening part, and the second substrate includes a second dielectric layer made of a material substantially the same as the first dielectric layer.
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