| 摘要 |
LOW DEFECT DENSITY, LOW IMPURITY BULK SINGLE CRYSTALS OF AIN, SIC AND AIN:SIC ALLOY ARE PRODUCED BY DEPOSITING APPROPRIATE VAPOR SPECIES OF AL, SI, N, C ON MULTIPLE NUCLEATION SITES (80,180) THAT ARE PREFERENTIALLY COOLED TO A TEMPERATURE LESS THAN THE SURROUNDING SURFACES IN THE CRYSTAL GROWTH ENCLOSURE (12). THE VAPOR SPECIES MAY BE PROVIDED BY SUBLIMING SOLID SOURCE MATERIAL (15), VAPORIZING LIQUID AL, SI OR AL-SI (975) OR INJECTING SOURCE GASES (993). THE MULTIPLE NUCLEATION SITES MAY BE UNSEEDED (80) OR SEEDED (180) WITH A SEED CRYSTAL SUCH AS 4H OR 6H SIC. |
