发明名称 |
Phase change memory cell on silicon-on insulator substrate |
摘要 |
The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.
|
申请公布号 |
US7005665(B2) |
申请公布日期 |
2006.02.28 |
申请号 |
US20040708667 |
申请日期 |
2004.03.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURKAY STEPHEN S.;HAMANN HENDRICK;JOHNSON JEFFREY B.;LAM CHUNG H.;WONG HON-SUM P. |
分类号 |
G11C13/00;H01L47/00;G11C11/56;H01L21/00;H01L21/06;H01L21/331;H01L27/10;H01L27/105;H01L27/12;H01L27/24;H01L29/00;H01L29/68;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|