发明名称 Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method
摘要 This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.
申请公布号 US7005081(B2) 申请公布日期 2006.02.28
申请号 US20020188931 申请日期 2002.07.03
申请人 CANON KABUSHIKI KAISHA 发明人 KAWASE NOBUO;OHTA MASAKATSU;TANAKA NOBUYOSHI
分类号 H01L21/00;B28D5/00;B28D5/04 主分类号 H01L21/00
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