| 摘要 |
A polishing fluid which comprises an oxidizing agent, an agent for dissolving an oxidized metal, an anticorrosive agent for a metal and water, wherein the anticorrosive agent for a metal comprises at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing fluid allows, in a wiring formation process for a semiconductor device, satisfactory enhancement of the rate of polishing in combination with the retention of the rate of etching at a low level and the suppression of corrosion of a metal surface and of dishing, which leads to the formation of a highly reliable pattern embedded with a metal film.
|
