Scalable two transistor memory devices and methods of forming the same,申请号KR20030034500-传众专利搜索

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发明名称	Scalable two transistor memory devices and methods of forming the same
摘要
申请公布号	KR100553687(B1)	申请公布日期	2006.02.24
申请号	KR20030034500	申请日期	2003.05.29
申请人		发明人
分类号	H01L27/108;H01L21/28;H01L21/311;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;H01L29/788	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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