| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to increase capacitance of a cell and to improve a refresh characteristic and sensitivity of a sense amplifier, by guaranteeing a maximum cross section in a limited area. CONSTITUTION: An insulation layer(202) having a conductive plug is formed on a semiconductor substrate(201) at regular intervals. A nitride layer pattern(204a) and an oxide layer pattern are sequentially formed to expose a predetermined portion of the conductive plug and the surface of the insulation layer adjacent to the conductive plug. The first amorphous silicon layer(207) is formed on the entire surface including the oxide layer pattern and the nitride layer pattern. An oxide layer sidewall is formed on the sidewall of the first amorphous silicon layer. After an amorphous silicon material is formed on the entire surface including the first amorphous silicon layer and the oxide layer sidewall, the entire surface is planarized to expose the upper surface of the oxide layer pattern so that the second amorphous silicon layer(209) is formed. After the oxide layer pattern and the oxide layer sidewall are eliminated, surface area enhanced silica(SAES)(210) is formed on the first and second amorphous silicon layers.
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