| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film forming method that enables silicon oxide film to pile, while suppressing metal surface oxidation. <P>SOLUTION: In a film formation method for forming a silicon oxide film on the processing object W whose metal surface has been exposed within the processing container 22 for vacuum treatment, an Si-contained gas supply process for supplying Si-contained gas to the above processing container 22, and an oxidation-reduction supply process for simultaneously supplying oxide gas and oxidation-reduction gas to the above processing container 22, are alternately executed intermittently. In this way, silicon-oxide film piling can be achieved while suppressing metal surface oxidation. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
