发明名称 |
Magnetic memory with static magnetic offset field |
摘要 |
A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
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申请公布号 |
US2006038211(A1) |
申请公布日期 |
2006.02.23 |
申请号 |
US20040920562 |
申请日期 |
2004.08.18 |
申请人 |
LEUSCHNER RAINER;BRAUN DANIEL;LEE GILL YONG;KLOSTERMANN ULRICH |
发明人 |
LEUSCHNER RAINER;BRAUN DANIEL;LEE GILL YONG;KLOSTERMANN ULRICH |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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