发明名称 |
Variable current sinking for coarse/fine programming of non-volatile memory |
摘要 |
A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
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申请公布号 |
US7002843(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040766786 |
申请日期 |
2004.01.27 |
申请人 |
SANDISK CORPORATION |
发明人 |
GUTERMAN DANIEL C.;MOKHLESI NIMA;FONG YUPIN |
分类号 |
G11C11/34;A43B13/18;G11C11/56;G11C16/10;G11C16/34;G11C27/00 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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