摘要 |
<p>For the purposes of reducing the number of particles on substrates and especially on semiconductor wafers which are being thermally treated, there is provided a method for the thermal treatment of the substrate in at least one process chamber, wherein the substrate is heated in a first process step to a temperature which is greater than that of the immediate environment whilst being kept static, and wherein the substrate continues to be heated in a second process step and is additionally set in motion. Furthermore, it is possible for a gas not to be introduced into the process chamber during the first process step, whereas a gas is introduced in the second process step.</p> |
申请人 |
MATTSON THERMAL PRODUCTS GMBH;NENYEI, ZSOLT;FRIGGE, STEFFEN;SCHMID, PATRICK;HUELSMANN, THORSTEN;THEILER, THOMAS |
发明人 |
NENYEI, ZSOLT;FRIGGE, STEFFEN;SCHMID, PATRICK;HUELSMANN, THORSTEN;THEILER, THOMAS |