| 摘要 |
The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconductor devices, among other elements, includes patterning gate structures on a substrate ( 220 ), each of the gate structures having a profile associated therewith, and obtaining information representative of the profiles of the gate structures ( 240 ). In accordance with the present invention the information may then be fed forward to alter a manufacturing parameter associated with a drive current of the semiconductor devices ( 250 ).
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