| 摘要 |
A bottom gate thin film transistor and method of fabricating the same are disclosed, in which a channel region is crystallized by a super grain silicon (SGS) crystallization method, including: forming a gate electrode and a gate insulating layer on an insulating substrate; forming an amorphous silicon layer on the gate insulating layer followed by forming a capping layer and a metal catalyst layer; performing heat treatment to crystallize the amorphous silicon layer into a polysilicon layer; and forming an etch stopper, source and drain regions and source and drain electrodes. The thin film transistor includes: an insulating substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate insulating layer and crystallized by an SGS crystallization method; and source and drain regions and source and drain electrodes formed in a predetermined region of the substrate. As described, a method of fabricating the conventional top-gate thin film transistor has problems in that an interface between a channel region and a gate insulating layer is directly exposed to air or in direct contact with a photoresist pattern or etchant so that the thin film transistor may be contaminated by impurities such as oxide, organic and metal, or damaged in grains, and in that a metal catalyst remains at an interface in crystallization so that leakage current may occur. However, advantageously, a method of fabricating a bottom-gate thin film transistor according to the present invention has merits in that an interface between the channel region and the gate insulating layer is not exposed to air so that the aforementioned problems do not occur. Therefore, a thin film transistor having excellent characteristics may be fabricated and a fabrication process thereof may be simplified.
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