FABRICATION METHODS OF A SEMICONDUCTOR DEVICE HAVING DUAL GATE ELECTRODE,申请号KR20040063306-传众专利搜索

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发明名称	FABRICATION METHODS OF A SEMICONDUCTOR DEVICE HAVING DUAL GATE ELECTRODE
摘要
申请公布号	KR20060014673(A)	申请公布日期	2006.02.16
申请号	KR20040063306	申请日期	2004.08.11
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	YUN, CHEOL JU;CHUNG, TAE YOUNG;LEE, EUN CHEOL
分类号	H01L27/092	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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