| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering deposition apparatus for depositing a chalcogen compound thin film having satisfactory characteristics, and to provide a method for depositing the chalcogen compound thin film employing the same. SOLUTION: A pulse DC bias intermittently applying the value of minus and the value of plus to a chalcogen compound target and a substrate is provided. At the time when the minus DC bias is fed, constitutive elements are sputtered from the chalcogen compound target and are combined with reactive gas, so as to deposit a chalcogen compound thin film on the substrate. At the time when the plus DC bias is fed, inert gas ions locally accumulated on the chalcogen compound target are released from the chalcogen compound. In this way, arcing caused by the accumulation of inert gas is eliminated, thus the chalcogen compound thin film in which impurity doping concentration is increased can be deposited, and the specific resistance of the chalcogen compound thin film can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
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