| 摘要 |
A method for fabricating an inspection sample of a silicon ingot is provided to guarantee a horizontal margin of a wafer sample in a polishing process for transforming a quadrangular silicon ingot sample into a type of a wafer sample by adding a carbon or ceramic beam to both sidewalls of a silicon ingot wherein the carbon or ceramic beam has similar strength to silicon. A silicon ingot of a cylindrical type is grown. The silicon ingot is firstly sliced into a block of a cylindrical type. Support members are attached to one and the other sides of the silicon ingot block(102) of the sliced cylindrical type. The silicon ingot block to which a beam(104) is attached is secondly sliced in a direction of a crystal axis to form a quadrangular sample. Every corner of the resultant quadrangular sample is polished to form a cylindrical sample of a wafer type. The support member can form one of a cram or ceramic beam.
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