| 摘要 |
<p>A method of manufacturing an electron-emitting device, which has an easy manufacturing process and preferably controls an electron beam diameter. The method includes: arranging on a substrate a member comprising a first electroconductive layer blanketing the substrate, a layer containing at least one of materials forming an electron-emitting element blanketing the first electroconductive layer, a protective layer blanketing the layer containing at least one of materials, a second electroconductive layer blanketing the protective layer, an insulating layer blanketing the second electroconductive layer, and a third electroconductive layer blanketing the insulating layer; forming an opening, which extends from a surface of the third electroconductive layer to the protective layer, by dry etching; and wet-etching the protective layer through the opening to expose a portion of the layer containing at least one of the materials forming the electron-emitting element.</p> |
