| 摘要 |
PROBLEM TO BE SOLVED: To provide a NAND version nonvolatile semiconductor memory device for suppressing the open circuit of WL near a shut, and for obtaining stable yield and a method for manufacturing it. SOLUTION: This NAND version nonvolatile semiconductor memory device is provided with a plurality of serially connected NAND columns where a plurality of gates formed on a semiconductor substrate share a source and drain formed on the semiconductor substrate. This semiconductor memory device is provided with select gates 10 arranged at the both ends of each of the NAND columns, a plurality of word lines 9 serving as charge storage regions arranged between the select gates, configuring control gates to be controlled by the select gates and a shunt 11 formed between the select gates 10 divided at a predetermined position between the adjacent NAND columns as the contact of the semiconductor substrate and the upper wiring. The divided select gates are respectively short-circuited with the adjacent select gates. COPYRIGHT: (C)2006,JPO&NCIPI
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