| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer which has a DZ (Denuded Zone) layer with extremely few crystal defects and excels in strength characteristics, and also to provide its manufacturing method. SOLUTION: The second surface 33 of a wafer material 30a where a device will not be formed is mirror-polished to remove the DZ layer 32 on the second surface side and expose a BMD layer 34 on the second surface side. By this removing process of the DZ layer, the silicon wafer 30 can be obtained having the DZ layer exposed on a first surface 31 and the BMD layer exposed on the second surface. COPYRIGHT: (C)2006,JPO&NCIPI
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