| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for an electrooptical device which is improved in display quality by making light transmissivity excellent and further improved in reliability by preventing a leak etc., by improving characteristics of a gate insulating film, and also to provide a manufacturing method therefor, the electrooptical device, and electronic equipment. SOLUTION: Disclosed is the manufacturing method for the substrate for the electrooptical device which includes: a base material 10a: a plurality of pixel areas arrayed and formed on the base material 10a; and thin film transistors and a capacity electrode connected to the thin film transistors in the pixel areas. The manufacturing method also includes steps of: forming a semiconductor layer 42 of a thin film transistor; forming a gate insulating film 2 on the semiconductor layer 42; forming an amorphous silicon layer 34A on the gate insulating films 2; and crystallizing the amorphous silicon layer by irradiating the amorphous silicon layer 34A with light to form a capacity electrode layer 34 made of polycrystalline silicon. COPYRIGHT: (C)2006,JPO&NCIPI |
