| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device wherein the generated shielding of its incident light in its peripheral edge of its light receiving portion is reduced and the increases of its angle of field and its driving speed are made possible. SOLUTION: The solid-state image pickup device adopts a single-layer transferring electrode structure wherein first and second transferring electrodes 3a, 3b are formed out of a single layer made of polysilicon. Further, above the first transferring electrodes 3a coupled to each other in the horizontal direction, two sets of shunt wiring 4a, 4b extended in the horizontal direction are so formed as to connect them with the first and second transferring electrodes 3a, 3b above transferring channels 2. Through the two sets of low-resistance shunt wiring 4a, 4b extended in the horizontal direction, e.g., four-phase transferring pulsesϕV1-ϕV4 are fed to the first and second transferring electrodes 3a, 3b existent above the transferring channels 2. COPYRIGHT: (C)2006,JPO&NCIPI |
