| 摘要 |
<P>PROBLEM TO BE SOLVED: To accurately control the scanning speed of the rays of light to scan a semiconductor wafer in accordance with the pattern of a lower layer in scan-and-repeat type exposure. <P>SOLUTION: An alignment pattern 10 is substantially formed in parallel to the scanning direction of the rays of light to scan in exposure in one scribe line 6 positioned at the rightmost end of the exposure region 4 of a semiconductor wafer 1. The alignment pattern 10 is formed by arraying fine patterns 8 at predetermined positions. The fine patterns 8 are arranged in two rows, and are substantially arranged with equal intervals in the both rows so that the intervals of the adjacent fine patterns 8 in the both rows can be made different from each other. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
