| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an array which makes effective use of an available minimum shape by increasing the concentration of memory cells formed in SOI RRAM array. <P>SOLUTION: The method of manufacturing a high density SOI crosspoint memory array comprises steps of forming a hard mask on an SOI substrate to define a memory region, an active device region, and a top electrode region; conducting etching so as to remove an exposed Si surface; forming a metal side wall adjacent to the hard mask; filling the memory region with a memory register material; removing the hard mask to expose the Si active device region laid above; forming an oxide layer to be laid above; etching the oxide layer to form a contact hole in the active device region; forming a diode in the contact hole; and forming a bottom electrode line laid on top of the diode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
