| 摘要 |
<P>PROBLEM TO BE SOLVED: To uniformalize the current density in a surface-emitting semiconductor laser having a scattering loss structure, low refractive index area, or pores used for controlling transverse mode. <P>SOLUTION: In the surface-emitting semiconductor laser, a vertical resonator is formed by arranging first and second DBRs with an active layer in between. There are arranged pores or the low refractive index area 21 formed by packing a material having a low refractive index in the cavity, having at least one or more ends facing the main current passage of the laser, in the outer peripheral section of the resonator. The cross-sectional shape of the facing end of the low refractive index area 21 crossing the current feeding direction of the main current passage of the laser is tapered off toward the center of the main current passage. In addition, at least part of the upper electrode 12 of the resonator is provided at about the central position of the outgoing port of the laser. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
