| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that it is difficult to raise the light emission efficiency of a nitride semiconductor light emitting device while keeping the forward direction voltage of the same device low. <P>SOLUTION: A main semiconductor region 3 is composed of an n-type semiconductor layer 6, an active layer 7, and a p-type semiconductor layer 8 while having a light emitting function, and arranged on a silicon substrate 1. The main semiconductor region 3 is formed of a nitride semiconductor. A light transmissive electrode 10 composed of an Ag alloy is provided on the p-type semiconductor layer 8 in the main semiconductor region 3. An adding element for suppressing oxidation or sulfuration is mixed into the Ag alloy. The Ag alloy is high in stability, and further, excellent in optical transparency and ohmic property. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
