| 摘要 |
PROBLEM TO BE SOLVED: To accurately form a magnetoresistive effect device including a structure wherein a magneto-resistive effect element is disposed between a pair of electrode layers disposed at an interval in the direction of thickness. SOLUTION: A magnetoresistive effect device comprises a pair of shield layers 3 and 8 disposed at an interval in the direction of thickness, an MR element 5 disposed between the shield layers 3 and 8, and a laminate 30 disposed between the shield layers 3 and 8 on both sides of the MR element 5. The laminate 30 include an insulating layer 31 and a bias magnetic field application layer 32. The shield layer 8 includes a face 8A confronting the shield layer 3. This face 8A includes a first portion 8A1 in contact with an upper surface 5B of the MR element 5, and a second portion 8A2 disposed on both sides of the MR element 5 in the widthwise direction of track. Between the first portion 8A1 and the second portion 8A2, a step D1 is formed so that the second portion 8A2 becomes closer to the shield layer 3 rather than the first portion 8A1. COPYRIGHT: (C)2006,JPO&NCIPI
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