| 摘要 |
The CMOS image sensor includes a plurality of photoelectric conversion elements arranged in a matrix having a plurality of rows and columns. A plurality of floating junctions are provided, each of which is arranged between one of a plurality of pairs of the photoelectric conversion elements arranged in adjacent two rows and is connected to one of the pairs of the photoelectric conversion elements, so that output signals of the pair of the photoelectric conversion elements may be transferred. Output circuits are connected to a plurality of the floating junctions arranged in the column for reading in common the output signals of the photoelectric conversion elements transferred to these flowing junctions. Output signal lines are provided for each column so as to supply output signals of the output circuits. The output circuits are arranged between the pairs of photoelectric conversion elements adjacently arranged in the row. A CMOS image sensor has a plurality of pixels PD arranged two-dimensionally at predetermined pitches in the vertical direction and horizontal direction and a plurality of output circuits OUT for reading output signals from the pixels PD and the output circuits OUT are arranged between pairs of PD pixels arranged in the row (vertical) direction. The output circuits OUT read in common accumulated signals of pixels composed of the plurality of pixels PD and output them to signal output lines. By use of such a constitution, integration of the pixels arranged in a two-dimensional matrix in the horizontal direction can be improved.
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