| 摘要 |
PROBLEM TO BE SOLVED: To enable ashing processing without exerting any adverse influence even if an interwire insulating film made of a low dielectric-constant material is exposed, and to contribute the realization of fine wires complying with recent demands. SOLUTION: When a wire structure 13 is formed by a dual-damascene method, the interwire insulating film 4 is formed of an inorganic porous insulating material which is a nonthermally volatile insulating material. When a resist pattern 10 and an organic antireflective film 9 are removed by ashing processing, damage is suppressed by using gas of only water or mixed gas containing water as ashing gas even if a portion of the interwire insulating film 4 is exposed. COPYRIGHT: (C)2006,JPO&NCIPI
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