摘要 |
<p>A semiconductor switch arrangement (300) comprises a bipolar transistor (302) and a semiconductor power switch (301) having an input node (306), an output node (304) and a control node (305) for allowing a current path to be formed between the input node (306) and the output node (307). The bipolar transistor (302) is coupled between the input node (306) and the control node (305) such that upon receiving an electro-static discharge pulse the bipolar transistor (302) allows a current to flow from the input node (306) to the control node (305) upon a predetermined voltage being exceeded at the input node (306) to allow the control node (305) to cause a current to flow from the input node (306) to the output node (307). Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1usec.</p> |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;NRS) LE CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C;ZECRI, MICHEL;BERTOLINI, LUCA;BESSE, PATRICE;BAFLEUR, MARYSE;NOLHIER, NICOLAS |
发明人 |
ZECRI, MICHEL;BERTOLINI, LUCA;BESSE, PATRICE;BAFLEUR, MARYSE;NOLHIER, NICOLAS |