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发明名称
Method For Forming The Inter Metal Dielectric Layer Of Semiconductor Device
摘要
申请公布号
KR100549582(B1)
申请公布日期
2006.02.08
申请号
KR19990014382
申请日期
1999.04.22
申请人
发明人
分类号
H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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