| 发明名称 |
NAND-type non-volatile memory cell and method for operating same |
| 摘要 |
A NAND-type erasable programmable read only memory (EEPROM) device formed of a number of substantially identical EEPROM cells with each EEPROM cell being capable of storing two bits of information. A simple method for operating the memory comprises erasing, programming, and reading the device.
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| 申请公布号 |
US6996011(B2) |
申请公布日期 |
2006.02.07 |
| 申请号 |
US20040855286 |
申请日期 |
2004.05.26 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YEH CHIH CHIEH;TSAI WEN JER;LU TAO CHENG |
| 分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
| 代理机构 |
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