| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method capable of improving breakdown strength. SOLUTION: The semiconductor device comprises an insulating layer, a semiconductor layer formed above the insulating layer, a gate insulating layer formed above the semiconductor layer, a gate electrode formed above the gate insulating layer, a source region formed in the semiconductor layer, and a drain region formed in the semiconductor layer. The specific inductive capacity of the insulating layer is higher than that of a silicon oxide. COPYRIGHT: (C)2006,JPO&NCIPI
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